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High performance all-sputter deposited Cu/sub 2/S/CdS junctions

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.93166· OSTI ID:5603239
Thin-film Cu/sub 2/S/CdS solar cells have been fabricated in a multisource chamber by using magnetron reactive sputtering to deposit the Cu/sub 2/S and CdS layers. An analysis of junction current voltage, log J/sub sc/ vs V/sub oc/ (where J/sub sc/ is the short circuit current and V/sub oc/ is the open circuit voltage) and capacitance versus voltage measurements indicates that the junctions have very good quality, with diode ideality factors of near unity, and interface recombination velocities of about 2 x 10/sup 5/ cm/s. Cells without antireflection coatings have yielded J/sub sc/ = 12.2 mA/cm/sup 2/, V/sub oc/ = 0.53 V, fill factors of 0.62, and efficiencies of approx.4% in their as-deposited state. The cells show that Cu/sub 2/S/CdS junctions equivalent to those formed by the topotaxial ion exchange method can be formed by sequential all-vacuum deposition of CdS and Cu/sub 2/S, and that magnetron sputtering does not cause damage that compromises their electrical performance.
Research Organization:
Telic Co., Santa Monica, CA
OSTI ID:
5603239
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:7; ISSN APPLA
Country of Publication:
United States
Language:
English