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U.S. Department of Energy
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Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Sixteenth quarterly report, July 1979-September 1979

Technical Report ·
DOI:https://doi.org/10.2172/5600955· OSTI ID:5600955
The objective of this program is to determine how thermal processes, impurities, and impurity-process interactions affect the properties of silicon and the performance of terrestrial solar cells made from silicon. The Phase III effort encompasses five major topics, several of which represent new directions for our work: (1) examination of the interaction of impurities with processing treatments, (2) generation of a data base and modeling of impurity effects in n-base solar cells, (3) extension of previous p-base studies to include impurities likely to be introduced during silicon production, refining or crystal growth, (4) a consideration of the potential impact of anisotropic (nonuniform) impurity distribution in large Czochralski and ribbon solar cells and, (5) a preliminary investigation of the permanence of impurity effects in silicon solar cells. Important experimental results were obtained in five areas during this past quarter: (1) the impact of HCl gettering on Mo and Ti doped low resistivity silicon was assessed, (2) diffusion profiles were established for Ti and Mo after 1100/sup 0/C gettering treatments, (3) a correlation was identified between the electrically-active impurity concentration and the metallurgical concentration of several impurities in as-grown ingots, (4) cell and diode measurements verified that no significant anisotropy effects due to Cu or Fe in large diameter CZ ingots, or due to Ti and V in wide silicon web crystals occur, and (5) aging data for Cr indicate a more rapid depreciation in cell performance with time than for Mo or Ti doped cells. A detailed description of the results and analyses of the observed behavior is presented. (WHK)
Research Organization:
Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
DOE Contract Number:
NAS-7-100-954331
OSTI ID:
5600955
Report Number(s):
DOE/JPL/954331-8
Country of Publication:
United States
Language:
English