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Vacancy cluster nucleation during irradiation with preferred point-defect absorption

Technical Report ·
OSTI ID:5595181

During high-temperature irradiation of metals a new microstructure is produced through the formation of dislocation loops, voids, and precipitates. The formation of voids and both interstitial- and vacancy-type loops is critically dependent on the bias factors for each sink and on the interaction between sink and point-defects. The recombination rate of vacancies and interstitials also depends on their mutual interaction. Therefore, the recombination coefficient as well as the bias factors for voids and vacancy- and interstitial-type loops are first derived, and subsequently utilized in studying their effects on the nucleation of both voids and vacancy-type loops. The rate of recombination is proportional to a recombination radius. The computed values for this radius are in good agreement with measured values at low temperatures.

Research Organization:
Wisconsin Univ., Madison (USA)
DOE Contract Number:
AS02-78ER04861
OSTI ID:
5595181
Report Number(s):
DOE/ER/04861-T2; ON: DE82005194
Country of Publication:
United States
Language:
English

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