skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Evidence for shallow positron traps in a neutron-irradiated Al single crystal as studied with variable-energy positrons

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

A monoenergetic ( +- 1 eV), variable energy (0.5 to 4 keV) beam of positrons has been used to study the dependence on temperature (40 to 350 K) of positron diffusion out of a neutron-irradiated single crystal of Al. The results are interpreted in the context of a one-dimensional diffusion model which encompasses annihilations as well as trapping at voids and other microstructural defects in the bulk material by way of a removal rate kappa/sub eff/ of positrons from freely diffusing states. kappa/sub eff/ is found to have a slightly positive dependence on temperature above 125 K, as would be expected from previous measurements of the position trapping rate into large voids. The data suggest a strongly negative dependence on temperature below 125 K for kappa/sub eff/, indicating the presence of some additional phenomenon which we attribute to positron localization in shallow, presumably radiation-induced, traps in the crystal. The results of our analyses provide support for conclusions reached previously for neutron-irradiated Mo. During preliminary annealing treatments of the samples we found, by Auger-electrons spectroscopy, that Si produced by neutron-induced transmutation migrated to the crystal surface. It is conjectured that redistribution of Si within the sample is responsible for a recovery stage previously observed in neutron-irradiated Al between 400 and 470 K.

Research Organization:
Brookhaven National Laboratory, Upton, New York 11973
OSTI ID:
5595071
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Vol. 25:6
Country of Publication:
United States
Language:
English