Metallization systems for stable ohmic contacts to GaAs

Technical Report · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5594672

Tandon, J L; Douglas, K D; Vendura, G; Kolawa, E; So, F C

A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W, or W(0.7)N(0.3), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed.

• Research Organization: California Inst. of Tech., Pasadena (USA)
• OSTI ID: 5594672
• Report Number(s): AD-A-185238/3/XAB
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
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42 ENGINEERING
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ARSENIC COMPOUNDS
ARSENIDES
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
METALS
NITRIDES
NITROGEN COMPOUNDS
PALLADIUM
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PLATINUM
PLATINUM METALS
PNICTIDES
REFRACTORY METAL COMPOUNDS
RUTHENIUM
SOLAR CELLS
SOLAR EQUIPMENT
TITANIUM
TITANIUM COMPOUNDS
TITANIUM NITRIDES
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN COMPOUNDS
TUNGSTEN NITRIDES