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Electronic and structural effects of oxygen doping in Bi sub 2 Sr sub 2 CaCu sub 2 O sub x superconductors characterized by tunneling microscopy

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ; ;  [1]
  1. Department of Chemistry, Columbia University, New York, New York 10027 (US)
Scanning tunneling microscopy has been used to characterize the electronic and structural effects of oxygen doping in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub {ital x}} materials. Bias-voltage-dependent images of oxygen-deficient nonsuperconducting crystals show that reversible oxygen loss leads to nonperiodic variations in the electronic states near the Fermi level ({plus minus}300 mV). Variations in the electronic states near the Fermi level are not observed, however, in images of superconducting samples. In addition, high-resolution images of the BiO layer of oxygen-deficient samples do not exhibit vacancies or strongly perturbed sites, but rather appear similar to images of the BiO layer of superconducting crystals. These data indicate that suppression of {ital T}{sub {ital c}} in Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub {ital x}} may not be due to oxygen loss from the BiO layer.
OSTI ID:
5592163
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:10; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English