(Ion beam deposition of epitaxial germanium and gallium arsenide layers): Foreign trip report, June 2, 1989--June 18, 1989

Technical Report · Wed Jul 05 00:00:00 EDT 1989

OSTI ID:5590500

Haynes, T E

The traveler presented an invited paper entitled ''Ion Beam Deposition of Epitaxial Germanium and Gallium Arsenide Layers'' at the Twelfth Symposium on Ion Sources and Ion-Assisted Technology (ISIAT '89) in Tokyo. During informal conversations at this meeting, the traveler was informed about a new Japanese initiative, sponsored by the Ministry of International Trade and Industry and an industrial consortium, to establish an Ion Engineering Research Center, whose purpose will be to provide sophisticated equipment and technology base for exploring and developing new applications of ion beam processing. The traveler also visited five Japanese laboratories involved in research on ion-solid interactions. Developments in ionized cluster beam (ICB) deposition were emphasized at ISIAT '89 and during visits to Kyoto University, where the ICB technique was pioneered, and to Mitsubishi Electric's Itami Works, where commercial ICB systems are now being produced. Discussions at Osaka University concentrated on the application of focused ion beams for maskless patterning of submicron devices and on recent studies of one- dimensional quantum effects in semiconductor wires. At Hitachi Research Laboratory, basic research on thin-film growth was described, as well as progress toward the development of a variable frequency RF quadrupole accelerator for ion implantation. Researchers at JAERI outlined programs in characterization and thin-film deposition of superconductors and in materials science studies using high-energy ion beams.

• Research Organization: Oak Ridge National Lab., TN (USA)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5590500
• Report Number(s): ORNL/FTR-3308; ON: DE89017439
• Resource Relation: Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
THIN FILMS
ION IMPLANTATION
CLUSTER BEAMS
GALLIUM ARSENIDES
GERMANIUM
ION BEAMS
ION SOURCES
JAPAN
TRAVEL
ARSENIC COMPOUNDS
ARSENIDES
ASIA
BEAMS
ELEMENTS
FILMS
GALLIUM COMPOUNDS
METALS
PNICTIDES
656003* - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)