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Strain-induced surface reactivity: Low temperature Cr/W(110) nitridation

Journal Article · · Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA)
DOI:https://doi.org/10.1116/1.577661· OSTI ID:5589677
;  [1]
  1. Surface Science Division 1114, Sandia National Laboratories, Albuquerque, New Mexico 87185 (US)
Synchrotron photoelectron and Auger electron spectroscopies have been used to study the reaction of nitrogen with ultrathin chromium overlayers vapor deposited on W(110). Molecular nitrogen dissociates via a metastable {pi}-bonded intermediate on Cr(110), the strained (1{times}1) Cr/W(110) monolayer and the (2{times}2) Cr/W(110) bilayer surfaces. However, the activation energy for dissociation of the {pi}-bonded intermediate is lower on the strained overlayers than on Cr(110). This has been exploited to grow ultrathin CrN layers on W(110), which are spectroscopically indistinguishable from chromium nitride formed by reacting atomic Cr and N{sub 2} simultaneously on W(110) at 300 K. This demonstrates that nitridation proceeds via energetically equivalent pathways at isolated Cr adatoms on W(110) and at majority sites on the strained Cr/W(110) overlayers. In addition, an anomalous narrow band of states near the Fermi level is found for these surface nitrides and, tentatively, is attributed to unique surface or interface states of CrN:W(110). These findings suggest that strained pseudomorphic overlayers may be useful templates for low temperature nitride film growth.
DOE Contract Number:
AC02-76CH00016
OSTI ID:
5589677
Journal Information:
Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA), Journal Name: Journal of Vacuum Science and Technology, A (Vacuum, Surfaces and Films); (USA) Vol. 9:3; ISSN JVTAD; ISSN 0734-2101
Country of Publication:
United States
Language:
English

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