Low defect density amorphous hydrogenated silicon prepared by homogeneous chemical vapor deposition

Journal Article · Tue Jun 01 04:00:00 EDT 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92972· OSTI ID:5584460

Scott, B A; Reimer, J A; Plecenik, R M; Simonyi, E E; Reuter, W

Compositional, structural and transport data are presented for amorphous hydrogenated silicon (a-Si:H) prepared by homogeneous chemical vapor deposition (HOMOCVD). We find a remarkable similarity in properties between HOMOCVD and plasma a-Si:H, including a nearly identical range (250--300 /sup 0/C) for the preparation of highly photoconductive films. However, unlike plasma material, HOMOCVD a-Si:H exhibits negligible photo-induced instabilities (Staebler--Wronski effect) and low spin concentrations over a wide span of deposition conditions. These results indicate that a significant defect-creating reaction, most likely surface Si-H bond scission, is occurring in the plasma environment, but absent in HOMOCVD.

• Research Organization: IBM T. J. Watson Research Center, Yorktown Heights, New York 10598
• OSTI ID: 5584460
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
AMORPHOUS STATE
ANGULAR MOMENTUM
CHEMICAL COATING
CHEMICAL REACTIONS
CHEMICAL VAPOR DEPOSITION
DATA
DEFECTS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EXPERIMENTAL DATA
FILMS
HIGH TEMPERATURE
HYDRIDES
HYDROGEN COMPOUNDS
HYDROGENATION
INFORMATION
INSTABILITY
NUMERICAL DATA
PARTICLE PROPERTIES
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
QUANTITY RATIO
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPIN
SURFACE COATING