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PbZrO sub 3 -doped (Ba,Sr)TiO sub 3 -based dielectrics for high-voltage capacitor applications

Journal Article · · American Ceramic Society Bulletin; (United States)
OSTI ID:5577063
; ;  [1]
  1. Div. of Electrical Materials, Korea Electrotechnology Research Inst., Changwon, Gyungnam 641-120 (KR)

This paper reports that high-dielectric ceramics with the composition (94.7% {minus} x) (Ba,Sr)TiO{sub 3} + PbZrO{sub 3} + 5Bi{sub 2}Ti{sub 3}O{sub 9} + 0.3MnO{sub 2}, where the ration (Ba)/(Sr) = 1.25 and x {le} 15 mol%, have been developed for high-voltage capacitors. The dielectric constant of the ceramics is in the range 1200 to 1900 at room temperature, and the room-temperature dielectric loss, tan{delta}, is less than 0.3%, except when 15 mol% PbZrO{sub 3} is added with sintering at 1180{degrees}C to 1240{degrees}C for 2 h. Ceramics with more than 8 mol% zirconate show the Y5S characteristic of capacitance, and those with less than 8 mol% additive exhibit the Z5S characteristic. The dielectric constant gradually increases with increment in the ac signal voltage at 60 Hz, but decreases beyond a threshold value that varies with zirconate content and sintering conditions. The variation of the dielectric constant at 2 kVrms/mm (with respect to 0.25 kVrms/mm) is {plus minus} less than 2%.

OSTI ID:
5577063
Journal Information:
American Ceramic Society Bulletin; (United States), Journal Name: American Ceramic Society Bulletin; (United States) Vol. 70:11; ISSN ACSBA; ISSN 0002-7812
Country of Publication:
United States
Language:
English