Optical second-harmonic generation in III-V semiconductors: Detailed formulation and computational results
- Department of Physics, The Ohio State University, Columbus, Ohio 43210-1106 (United States)
- Applied Process Research, SP-PR-22, Corning Incorporated, Corning, New York 14831 (United States) Department of Physics, The Ohio State University, Columbus, Ohio 43210-1106 (United States)
In an earlier paper (Phys. Rev. Lett. 66, 41 (1991)), we calculated both the dielectric constant ({epsilon}{sub {infinity}}) and the nonlinear optical susceptibilities for second-harmonic generation ({chi}{sup (2)}) in the static limit for AlP, AlAs, GaP, and GaAs in the local-density approximation with and without a self-energy correction in the form of a scissors operator,'' including local-field effects. In this paper, we expand our presentation of this calculation. Agreement with experiment to within 15% for the nonlinear susceptibility is demonstrated where experiments are available (GaP and GaAs); the dielectric constants are in no worse than 4% agreement with experiment. The virtual hole'' contributions are reformulated to avoid large numerical cancellations in the case of near degeneracies. The virtual electron'' terms dominate over the virtual hole'' terms by about one order of magnitude. Local-field corrections are smaller than the main terms by about one order of magnitude. The formulas needed to apply a self-energy correction in the form of a scissors operator'' to this problem are presented. The addition of a self-energy correction requires a renormalization of the velocity operator; a failure to include the velocity-operator renormalization leads to a factor-of-2 correction to {chi}{sup (2)}, destroying the good agreement with experiment. The neglect of the short-wave charge induced at the second-harmonic frequency is justified. The {ital f}-sum rule and another, related sum rule for second-harmonic generation is well satisfied numerically. For well-converged results, a plane-wave-basis-set energy cutoff of 9--12 hartrees is required for GaAs, but only eigenfunctions with eigenvalues less than about 1--2 hartrees need be included.
- OSTI ID:
- 5575155
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Vol. 44:23; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
HARMONIC GENERATION
ALUMINIUM PHOSPHIDES
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
GERMANIUM
SILICON
DIELECTRIC TENSOR
RENORMALIZATION
SELF-ENERGY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELEMENTS
ENERGY
FREQUENCY MIXING
GALLIUM COMPOUNDS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMIMETALS
TENSORS
360606* - Other Materials- Physical Properties- (1992-)