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Title: The role of visualization in the simulation of quantum electronic transport in semiconductors

Journal Article · · Computer; (USA)
DOI:https://doi.org/10.1109/2.35201· OSTI ID:5574052

In simulating a semiconductor device, examining the raw numerical data rarely fosters an understanding of physical processes within the device. Visualization tools provide a useful method for interpreting this voluminous data and allow a better understanding of the semiconductor. Pictorial representation of data can reveal results not readily discerned from the data alone. Furthermore, animating a sequence of data frames permits visualization of time-evolving systems. These advantages hold especially true when studying ultrasmall devices such as the resonant tunneling diode. The RTD is a gallium-arsenide semiconductor structure in which two thin layers (a few nanometers thick) of aluminum gallium arsenide (AlGaAs) form quantum tunneling barriers around a thin layer of gallium arsenide. The quantum tunneling probability in this structure possesses a sharp peak, corresponding to resonant tunneling. Experimental devices incorporating this structure show negative differential conductivity in their current-voltage (I-V) characteristics, as predicted by theory. Efforts to model the RTD met with only limited success until employment of the Wigner function formalism.

OSTI ID:
5574052
Journal Information:
Computer; (USA), Vol. 22:8; ISSN 0018-9162
Country of Publication:
United States
Language:
English