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Diffusion of oxygen in superconducting YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ oxide upon annealing in helium and oxygen ambients

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.98980· OSTI ID:5574014
Superconducting YBa/sub 2/Cu/sub 3/O/sub 7-//sub delta/ oxide specimens (T/sub c/approx.91 K) formed by sintering were annealed in He gas ambient at constant temperatures ranging from 300 to 440 /sup 0/C. Outdiffusion of oxygen during the annealing procedure was monitored by in situ electrical resistivity measurement. Below 350 /sup 0/C, no resistivity changes were observed with time. From 370 to 440 /sup 0/C, resistivity increased linearly with annealing time except the very initial period. Indiffusion of oxygen monitored by switching He to O/sub 2/ (or air) during the annealing occurred extremely rapidly as indicated by a precipitous drop of resistivity. Assuming that the outdiffusion of oxygen is interfacial-reaction limited, an activation energy of 1.7 eV was measured. The effects of oxygen diffusion on resistivity indicate that oxygen atoms mediate majority carriers in the oxide.
Research Organization:
IBM T.J. Watson Research Center, Yorktown Heights, New York 10598
OSTI ID:
5574014
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:25; ISSN APPLA
Country of Publication:
United States
Language:
English