Nonlinear optical properties of strained GaAs-In sub x Ga sub 1 minus x As multiple quantum well structures using a titanium sapphire laser probe

Conference · Sat Oct 01 00:00:00 EDT 1988 · AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA)

OSTI ID:5572045

Aron, K; Hansen, G; Stone, R; Lytel, R; Anderson, W W ^[1]

---

1. Lockheed Palo Alto Research Laboratory 3251 Hanover Street, Palo Alto, California 94304-1191 (US)

The nonlinear saturation of the excitonic absorbtion in a GaAs-In{sub {ital x}}Ga{sub 1{minus}{ital x}}As multiple quantum well sample consisting of 80 wells was investigated in the vicinity of the excitonic resonance at 991 nm using a tunable titanium sapphire laser probe. This characterization yields a saturation intensity of less than 50 kW/cm{sup 2} and a maximum off-resonance nonlinear refractive index of 6.42--10{sup {minus}7} cm{sup 2}/W. This dispersion can lead to practical optically bistable etalons fabricated from these multiple quantum well structures.

• OSTI ID: 5572045
• Report Number(s): CONF-871147-; CODEN: APCPC
• Journal Information: AIP Conference Proceedings (American Institute of Physics) Conference Proceedings; (USA), Vol. 172:1; Conference: 3. international laser science conference: advances in laser science, Atlantic City, NJ (USA), 1-5 Nov 1987; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR MATERIALS
NONLINEAR OPTICS
ABSORPTION SPECTROSCOPY
EXCITONS
SATURATION
SWITCHES
ELECTRICAL EQUIPMENT
EQUIPMENT
MATERIALS
OPTICS
QUASI PARTICLES
SPECTROSCOPY
420300* - Engineering- Lasers- (-1989)