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Effect of hopping between oxygen atoms on the metal-insulator transition in CuO sub 2 planes of high- T sub c superconductors

Journal Article · · Physical Review, B: Condensed Matter; (USA)
; ;  [1]
  1. Institute for Theoretical Physics, Freie Universitaet Berlin, Arnimalle 14, D-1000 Berlin 33, Federal Republic of Germany (DE)
Using the slave-boson technique developed by Kotliar and Ruckenstein, we studied the metal-insulator transition in the antiferromagnetic ground state of high-{ital T}{sub {ital c}} superconducting oxides. The Hubbard Hamiltonian used for the calculations includes hopping between oxygen atoms as well as Cu-O hopping. It is shown that hopping between oxygen atoms is particularly important for this metal-insulator transition. In the absence of this hopping, the transition to the insulating phase occurs already for infinitesimally small on-site Coulomb repulsion. Results for the phase diagram in the ({ital U},{Delta}) plane for three typical values of oxygen-oxygen hopping are given. Our results are compared with the ones obtained for the paramagnetic state. In agreement with experiment, we obtain a transition from an antiferromagnetic insulating state to a metallic state as function of doping.
OSTI ID:
5570573
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:13; ISSN 0163-1829; ISSN PRBMD
Country of Publication:
United States
Language:
English