Relationship between interatomic bonding and electron transport in plasma deposited amorphous metal alloys
Amorphous metal alloy films have been produced using a new technique. Nominally NiP alloys are made by dissociating mixtures of nickel carbonyl and phosphine using a radio-frequency discharge in either an argon or a hydrogen carrier gas. This process incorporates significant amounts of carbon and oxygen impurities into the film. A previously unreported relationship between the interatomic bonding involving these impurities and the electronic transport properties of the films is discussed in this paper. The bonding studies were carried out principally using Auger lineshape analysis. Transport properties measured included 4-terminal resistivities, Hall mobilities and carrier concentrations, and Seebeck coefficients. Covalent bonding of Ni with C or P with O is strongly correlated with high resistivity, mainly through a decrease in carrier density.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5565614
- Report Number(s):
- SAND-85-0913C; CONF-850421-12; ON: DE85014710
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360104* -- Metals & Alloys-- Physical Properties
AMORPHOUS STATE
AUGER ELECTRON SPECTROSCOPY
CARRIER DENSITY
CORRELATIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
FILMS
HALL EFFECT
METALLIC GLASSES
NICKEL COMPOUNDS
NICKEL PHOSPHIDES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
PRODUCTION
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS