Dilute magnetic semiconductor (Cd/sub 1-x/Mn/sub x/Te) quantum well laser
In this letter we report the first observation of stimulated emission from an optically pumped multilayer structure in which Cd/sub 1-x/Mn/sub x/Te, a dilute magnetic semiconductor (DMS), serves as the active quantum well material. The DMS laser structure was grown by molecular beam epitaxy with an active region consisting of 25 Cd/sub 0.81/Mn/sub 0.19/Te quantum wells of thickness L/sub Z/ = 125 A alternating with 24 Cd/sub 0.64/Mn/sub 0.36/Te barrier layers of thickness L/sub B/ = 40 A. The DMS lasers operate in the visible (red) spectral region at 665--670 nm when pumped at T = 15 K with a pulsed argon ion laser. The threshold for laser action occurs at a peak pump power density of about 2.0 x 10/sup 4/ W/cm/sup 2/.
- Research Organization:
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
- OSTI ID:
- 5563969
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 46:12; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Stimulated emission from a Cd/sub 1-x/Mn/sub x/Te-CdTe multilayer structure
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARGON
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
DATA
DIMENSIONS
EFFICIENCY
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
ENERGY
ENERGY-LEVEL TRANSITIONS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
FLUIDS
GASES
INFORMATION
LASER RADIATION
LASERS
LAYERS
MANGANESE COMPOUNDS
MANGANESE TELLURIDES
MOLECULAR BEAM EPITAXY
NONMETALS
NUMERICAL DATA
OPTICAL PUMPING
POWER
PUMPING
RADIATIONS
RARE GASES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STIMULATED EMISSION
TELLURIDES
TELLURIUM COMPOUNDS
THICKNESS
THRESHOLD ENERGY
TRANSITION ELEMENT COMPOUNDS