Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Layer-by-layer epitaxial growth of a Bi sub 2 Sr sub 2 CuO sub 6 thin film on a Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 single crystal

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105006· OSTI ID:5563102
; ; ;  [1]; ;  [2]
  1. The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567, Japan (JP)
  2. Superconducting Cryogenic Technology Center, Kobe Steel, Ltd., Takatsukadai 1-chome, Nishi-ku, Kobe 651-22, (Japan)

The epitaxial growth of a Bi{sub 2}Sr{sub 2}CuO{sub 6} (2201) thin film on a Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} (2212) single crystal has been performed using computer-controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 {degree}C in NO{sub 2} pressure of 1{times}10{sup {minus}5} mbar. The growth process of the 2201 film has been observed by {ital in} {ital situ} reflection high-energy electron diffraction (RHEED), and the layer-by-layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth, a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.

OSTI ID:
5563102
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:18; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English