Layer-by-layer epitaxial growth of a Bi sub 2 Sr sub 2 CuO sub 6 thin film on a Bi sub 2 Sr sub 2 CaCu sub 2 O sub 8 single crystal
- The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567, Japan (JP)
- Superconducting Cryogenic Technology Center, Kobe Steel, Ltd., Takatsukadai 1-chome, Nishi-ku, Kobe 651-22, (Japan)
The epitaxial growth of a Bi{sub 2}Sr{sub 2}CuO{sub 6} (2201) thin film on a Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} (2212) single crystal has been performed using computer-controlled laser molecular beam epitaxy. The surface of the 2212 single crystal used as the substrate is smooth and invariant under the growth condition at 640 {degree}C in NO{sub 2} pressure of 1{times}10{sup {minus}5} mbar. The growth process of the 2201 film has been observed by {ital in} {ital situ} reflection high-energy electron diffraction (RHEED), and the layer-by-layer growth of the 2201 phase is confirmed by the oscillation of RHEED intensities. During the growth, a modulated surface structure which is characteristic of the Bi cuprate crystals is always present.
- OSTI ID:
- 5563102
- Journal Information:
- Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 58:18; ISSN APPLA; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
ALKALINE EARTH METAL COMPOUNDS
BISMUTH COMPOUNDS
BISMUTH OXIDES
CALCIUM COMPOUNDS
CALCIUM OXIDES
CHALCOGENIDES
COHERENT SCATTERING
COPPER COMPOUNDS
COPPER OXIDES
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRON DIFFRACTION
EPITAXY
FILMS
MOLECULAR BEAM EPITAXY
OXIDES
OXYGEN COMPOUNDS
SCATTERING
STRONTIUM COMPOUNDS
STRONTIUM OXIDES
SUPERCONDUCTING FILMS
TRANSITION ELEMENT COMPOUNDS