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Potential barrier model incorporating localized states explaining tunnel anomalies

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.336100· OSTI ID:5558500
Most tunnel barriers contain localized electronic states n/sub l/(..delta..x, epsilon) in large amounts decreasing with distance ..delta..x from the metal. The localized states hybridize with conduction electrons forming interface states with a decay width ..delta../sub l/proportionalexp(-2..delta..xkappa) and a correlation energy ..delta..U* proportional 1/epsilon/sub r/..delta..x. For ..delta..U*>..delta../sub l/ these states are localized, which yields a strong coupling to surface plasmons, phonons, and spins. These states cause diffuse surface scattering and enhance exponentially (proportional ..delta../sup -1//sub l/ proportionalexp(+2..delta..xkappa)) the tunnel matrix element by resonant tunneling j/sup R/ as compared to tunneling j/sup phi-bar/ through the whole potential barrier phi-bar. Consequently at voltages Vertical BareUVertical Bar
Research Organization:
Kernforschungszentrum Karlsruhe GmbH, Institute fuer Kernphysik II, Postfach 3640, D-7500 Karlsruhe 1, Federal Republic of Germany
OSTI ID:
5558500
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:3; ISSN JAPIA
Country of Publication:
United States
Language:
English