Quantum fluctuations and charging effects in small tunnel junctions

Journal Article · Mon Apr 01 04:00:00 EST 1991 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.43.7586· OSTI ID:5557730

Flensberg, K ^[1]; Jonson, M ^[2]

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1. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996-1501 (USA) Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 38731-6024 (USA)
2. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996-1501 (USA) Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 38731-6024 (USA) Institute of Theoretical Physics, Chalmers University of Technology, S-412 96 Goeteborg, (Sweden)

The finite voltage conductance of an ultrasmall single tunnel junction of nominal resistance {ital R}{sub 0} is calculated within a model that includes quantum voltage fluctuations. Fluctuations are induced by charge transfer across the junction as well as by coupling to its electromagnetic environment via a transmission line of arbitrary impedance {ital Z}({omega}). Both types of quantum fluctuations suppress the Coulomb blockade. Within a harmonic approximation we show that for a general frequency-dependent transmission-line impedance the impedances simply add in parallel. The low-frequency fluctuations are given by an effective coupling constant {gamma}{sub tot}={ital R}{sub {ital H}}/2{ital Z}{sub tot}, where {ital Z}{sub tot}{sup {minus}1}={ital Z}(0){sup {minus}1}+{ital R}{sub 0}{sup {minus}1} and {ital R}{sub {ital H}}={ital h}/{ital e}{sup 2} is the quantum of resistance.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5557730
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:10; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
426000 -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CAPACITORS
CHARGE EXCHANGE
CHARGE STATE
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
FLUCTUATIONS
JUNCTIONS
MECHANICS
PARAMETRIC ANALYSIS
PHYSICAL PROPERTIES
QUANTUM MECHANICS
SEMICONDUCTOR JUNCTIONS
SIMULATION
TUNNEL EFFECT
VARIATIONS