skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Quantum fluctuations and charging effects in small tunnel junctions

Journal Article · · Physical Review, B: Condensed Matter; (USA)
 [1];  [2]
  1. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996-1501 (USA) Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 38731-6024 (USA)
  2. Department of Physics, University of Tennessee, Knoxville, Tennessee 37996-1501 (USA) Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 38731-6024 (USA) Institute of Theoretical Physics, Chalmers University of Technology, S-412 96 Goeteborg, (Sweden)

The finite voltage conductance of an ultrasmall single tunnel junction of nominal resistance {ital R}{sub 0} is calculated within a model that includes quantum voltage fluctuations. Fluctuations are induced by charge transfer across the junction as well as by coupling to its electromagnetic environment via a transmission line of arbitrary impedance {ital Z}({omega}). Both types of quantum fluctuations suppress the Coulomb blockade. Within a harmonic approximation we show that for a general frequency-dependent transmission-line impedance the impedances simply add in parallel. The low-frequency fluctuations are given by an effective coupling constant {gamma}{sub tot}={ital R}{sub {ital H}}/2{ital Z}{sub tot}, where {ital Z}{sub tot}{sup {minus}1}={ital Z}(0){sup {minus}1}+{ital R}{sub 0}{sup {minus}1} and {ital R}{sub {ital H}}={ital h}/{ital e}{sup 2} is the quantum of resistance.

DOE Contract Number:
AC05-84OR21400
OSTI ID:
5557730
Journal Information:
Physical Review, B: Condensed Matter; (USA), Vol. 43:10; ISSN 0163-1829
Country of Publication:
United States
Language:
English