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Properties of the 800-nm luminescence band in neutron-irradiated magnesium oxide crystals

Journal Article · · Physical Review, B: Condensed Matter; (USA)
;  [1]; ; ;  [2];  [3]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6031 (USA)
  2. Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (USA)
  3. Department of Physics, University of Utah, Salt Lake City, Utah 84101 (USA)
We present results on the luminescence at 800 nm which occurs upon excitation of the 573-nm optical absorption band attributed to an aggregate defect in neutron-irradiated MgO crystals both pure and doped. The study was undertaken to evaluate the suitability of this luminescence for a tunable laser. Absorption, luminescence, and excitation spectra were measured before and after isochronal annealing, with the goal of optimizing the luminescence intensity and stability of the responsible defect, and reducing the background absorption in the crystal. The emission intensity is highest after annealing at {similar to}550 K independent of dose. A thermally induced absorption band at 565 nm, which emerges at {similar to}550 K, does not contribute to the emission at 800 nm. Under low-intensity continuous excitation, the 573-nm absorption band is not susceptible to photoconversion. However, when pumped with high-intensity laser light, the band exhibits a decay which recovers within 0.5 s. The luminescence has a single-exponential decay time of 15.5 ns at room temperature, and the band shape remains essentially constant throughout the decay. Tests for laser action using pulsed and cw pump lasers were unsuccessful at 77 and 300 K.
OSTI ID:
5557578
Journal Information:
Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 43:7; ISSN PRBMD; ISSN 0163-1829
Country of Publication:
United States
Language:
English

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