Low temperature synthesis of high purity monoclinic celsian using topaz

Patent · Tue Feb 19 04:00:00 EST 1991

OSTI ID:5554916

Talmy, I G; Haught, D A

This patent describes a process for preparing monoclinic BaO {center dot} Al{sub 2}O{sub 3} {center dot} 2SiO{sub 2}. It comprises: forming an intimate reaction mixture of powders of topaz and BaCO{sub 3} wherein the molar ratio of topaz to BaCO{sub 3} is from 2:1 to 4:1; and heating the reaction mixture to initiate a celsian formation reaction, in an atmosphere of gases generated by the celsian formation reaction, at a temperature in the range of from 900{degrees} C. to less than 1590{degrees} C. until the monoclinic celsian is produced.

• Assignee: Secretary of the Navy, Washington, DC (USA)
• Patent Number(s): A; US 4994419
• Application Number: PPN: US 7-580012
• OSTI ID: 5554916
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
CRYSTAL LATTICES
CRYSTAL STRUCTURE
MINERALS
MONOCLINIC LATTICES
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SYNTHESIS