Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Novel ways of depositing ZnTe films by a solution growth technique

Technical Report ·
DOI:https://doi.org/10.2172/5553857· OSTI ID:5553857
 [1]
  1. Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion

Cu-doped ZnTe films, <1000{Angstrom}, were reproducibly deposited for the first time by an electrochemical method. A CdTe/CdS/ITO/glass substrate is externally short circuited to a zinc counter electrode in an aqueous bath consisting of ZnCl{sub 2} and TeO{sub 2} to complete an electrochemical cell. Control of both pH and TeO{sub 2} concentration was necessary to deposit single phase ZnTe films. A copper complex was added to the bath to control the ZnTe conductivity and dope the films p-type. CdTe/CdS solar cells using the ZnTe:Cu as the primary contact to the CdTe have achieved efficiencies of {approximately}9%. 15 refs., 7 figs., 2 tabs.

Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Delaware Univ., Newark, DE (USA). Inst. of Energy Conversion
Sponsoring Organization:
DOE; USDOE, Washington, DC (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5553857
Report Number(s):
SERI/TP-210-4319; ON: DE91002189
Country of Publication:
United States
Language:
English