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Single flux-quantum Josephson memory cell using a new threshold characteristic

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.94238· OSTI ID:5553839

A new single flux-quantum Josephson memory cell in which nondestructive readout (NDRO) operations can be realized with a simple circuit configuration is proposed. The memory cell utilizes a new type of threshold characteristics in an equivalent asymmetric dc superconducting quantum interference device (SQUID) consisting of a three-junction SQUID gate and a single junction. NDRO operation has been successfully demonstrated in an experimental memory circuit.

Research Organization:
Electrotechnical Laboratory, Sakura-mura, Niihari-gun, Ibaraki 305, Japan
OSTI ID:
5553839
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:11; ISSN APPLA
Country of Publication:
United States
Language:
English

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