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Title: Method for growing patterned thin films of superconductors

Patent ·
OSTI ID:5552857

This patent describes a method for growing a patterned superconductive oxide film of the general formula XZ/sub 2/Cu/sub 3/O/sub 6+chi/, wherein X is yttrium, a lanthanide or a mixture thereof, Z is one or more alkaline earth elements and chi is a number between 0 and 1. The method consists the steps of: preparing an aqueous solution of the nitrates, of X, Z and Cu in the X:Z:Cu stoichiometric ratio of 1:2:3; spraying the aqueous solution onto a substrate heated to a temperature between at least the decomposition temperature of the nitrates in the solution and the lowest temperature above the decomposition temperature at which a film does not form on the substrate, thereby forming on the substrate a thin film of XZ/sub 2/Cu/sub 3/O/sub y/ material, wherein y is an undefined number; spot-heating preselected portions of the thin film of XZ/sub 2/Cu/sub 3/O/sub y/ material in a substantially pure oxygen atmosphere to a temperature between 800{sup 0}C and 950{sup 0}C for a time sufficient to convert the preselected portions into a patterned superconductive oxide film XZ/sub 2/Cu/sub 3/O/sub 6+chi/; and removing the unheated XZ/sub 2/Cu/sub 3/O/sub y/ material in order to leave only the patterned superconductive oxide film of XZ/sub 2/Cu/sub 3/O/sub 6+chi/ material on the substrate.

Assignee:
Secretary of the Navy, Washington, DC
Patent Number(s):
US 4843060
Application Number:
TRN: 89-026395
OSTI ID:
5552857
Resource Relation:
Patent File Date: 23 Nov 1987
Country of Publication:
United States
Language:
English