Mass enhancement and magnetic order at the Mott-Hubbard transition

Journal Article · Wed Dec 01 04:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.16841· OSTI ID:5550374

Carter, S A; Rosenbaum, T F ^[1]; Metcalf, P; Honig, J M; Spalek, J ^[2]

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1. The James Franck Institute and Department of Physics, The University of Chicago, Chicago, Illinois 60637 (United States)
2. Department of Chemistry, Purdue University, West Lafayette, Indiana 47907 (United States)

We study the evolution with pressure [ital P] and band filling [ital y] of the heat capacity, Hall coefficient, and resistivity at the approach to the [ital T][r arrow]0 Mott-Hubbard metal-insulator transition (MIT) in highly correlated V[sub 2[minus][ital y]]O[sub 3]. Under [ital P], the electronic effective mass [ital m][sup *] diverges at the MIT with a negligible change in carrier concentration [ital n] away from half-filling. Conversely, in the doped system [ital m][sup *] actually decreases as the MIT is approached, while [ital n] increases linearly with [ital y]. The low-[ital T] magnetic order in the metal helps us deconvolute contributions from charge correlations and spin fluctuations.

• DOE Contract Number: FG02-90ER45427
• OSTI ID: 5550374
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:22; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
CHALCOGENIDES
EFFECTIVE MASS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
HALL EFFECT
MASS
NEEL TEMPERATURE
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
SPECIFIC HEAT
STOICHIOMETRY
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENT COMPOUNDS
TRANSITION TEMPERATURE
VANADIUM COMPOUNDS
VANADIUM OXIDES