Formation of surface [ital F] centers on CaF[sub 2]/Si(111)

Journal Article · Wed Dec 15 04:00:00 EST 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.18332· OSTI ID:5550370

Chakarian, V; Durbin, T D; Varekamp, P R; Yarmoff, J A ^[1]

---

1. Department of Physics, University of California, Riverside, California 92521 (United States) Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720 (United States)

The electronic transitions responsible for the formation of [ital F] centers at the surfaces of epitaxial CaF[sub 2] films on Si(111) have been identified via photon-stimulated desorption spectroscopy. Results for films ranging from submonolayer to bulk CaF[sub 2] indicate that excitations of the Ca 3[ital p] core level result in F[sup +] desorption, and hence, in [ital F]-center formation, while excitations of the F 2[ital s] do not. It is proposed that this difference is due to inward nuclear motion that occurs prior to the deexcitation of the core hole.

• DOE Contract Number: AC02-76CH00016
• OSTI ID: 5550370
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 48:24; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALKALINE EARTH METAL COMPOUNDS
CALCIUM COMPOUNDS
CALCIUM FLUORIDES
CALCIUM HALIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DESORPTION
DIMENSIONS
ELECTRONIC STRUCTURE
ELEMENTS
F CENTERS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HOLES
POINT DEFECTS
SEMIMETALS
SILICON
SORPTION
SURFACES
THICKNESS
VACANCIES