Solid-state research. Quarterly technical report, 1 November 1986-31 January 1987
Contents include: high-spectral-purity c-w and pulsed output from an ensemble of discrete diode lasers; ohmic heating in p-substrate buried heterostructure lasers - an analytical solution; proton irradiation and annealing of Fe-doped semi-insulating InP 16-gb/s large-signal digital modulation of diode lasers; studies of transient effects in Ti:A10 laser tuning; acousto optic modulator as a unidirectional device in a ring laser; model-locked Ti:A10 laser injection-locking a 1.32-micrometer Nd:YAG laser with a diode laser; generation of second harmonic of Nd:YAG laser radiation; new system for zone-melting recrystallizations of SOI films; diffusion model for estimating interface widths in heterostructures grown in a vertical OMVPE reactor; laser direct-written tungsten microstrip lines for GaAs monolithic microwave integrated-circuit trimming; small-signal gain performance of the permeable-base transistor at ehf; pbt sample-and-hold circuits; fabrication of submicrometer-size structures in Si using Sf/reactive ion etching; incremental writing in MNOS capacitors; laser photochemical processing of Cr-CrO films for amplitude compensation of surface acoustic-wave devices; and low-phase-noise oscillators stabilized by bulk-acoustic-wave holographic grating resonators.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
- OSTI ID:
- 5544137
- Report Number(s):
- AD-A-185987/5/XAB
- Country of Publication:
- United States
- Language:
- English
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