Laser emission from semiconductor microcavities: Transition from nonperturbative to perturbative regimes
- Department of Physics and Oregon Center for Optics, University of Oregon, Eugene, Oregon 97403 (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
We have demonstrated laser emission at densities below the saturation exciton density in a semiconductor microcavity by tuning the cavity resonance to the low-energy side of the inhomogeneously broadened exciton distribution. Laser emission in this regime arises from population inversion of localized excitons at the low-energy tail of the inhomogeneous distribution. Distinct spectral line shapes of laser emission and especially a large and abrupt change in the lasing threshold are observed when the composite system undergoes a transition from the nonperturbative to the perturbative regimes. The abrupt threshold change is attributed to ionization of excitons occurring in the transition region. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 554369
- Journal Information:
- Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 56; ISSN PRBMDO; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
Similar Records
Stimulated emission from semiconductor microcavities
Biexcitonic effects in the nonperturbative regime of semiconductor microcavities