Defect Donor and Acceptor in GaN
- University Research Center, Wright State University, Dayton, Ohio 45435 (United States)
- Avionics Directorate, WL/AADP, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)
- Massachusetts Institute of Technology/Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02173 (United States)
High-energy (0.7{endash}1MeV) electron irradiation in GaN grown on sapphire produces shallow donors and deep or shallow acceptors at equal rates, 1{plus_minus}0.2 cm{sup {minus}1}. The data, in conjunction with theory, are consistent only with the shallow donor being the N vacancy, and the acceptor the N interstitial. The N-vacancy donor energy is 64{plus_minus}10 meV, much larger than the value of 18meV found for the residual donor (probably Si) in this material. The Hall-effect measurements also reveal a degenerate n -type layer at the GaN/sapphire interface which must be accounted for to get the proper donor activation energy. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 554223
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 12 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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