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Radiation-induced segregation to grain boundaries in a Ni-Si alloy

Conference ·
OSTI ID:5541655
Solute transport by radiation-induced segregation (RIS) leads to local changes of alloy composition. We have studied RIS in a binary Ni-8 at. % Si alloy by 7-MeV-proton and 28-MeV-alpha particle irradiations. Damage levels varied between 0.1 and 0.3 dpa. The irradiations were carried out at 475/sup 0/C, the expected peak RIS temperature; preimplantation of helium at 700/sup 0/C was carried out in some specimens. Solute segregation was studied by energy-dispersive x-ray analysis (EDX). Using very fine electron-beam probes of 2 nm diameter from a high-brightness field-emission source, microchemical profiles across the grain boundaries were measured. Radiation-induced precipitation of Ni/sub 3/Si was investigated by dark-field transmission electron microscopy (TEM).
Research Organization:
Oak Ridge National Lab., TN (USA); Kernforschungsanlage Juelich G.m.b.H. (Germany, F.R.). Inst. fuer Festkoerperforschung
DOE Contract Number:
AC05-84OR21400
OSTI ID:
5541655
Report Number(s):
CONF-860854-3; ON: DE86010027
Country of Publication:
United States
Language:
English