Surface composition of SiC after ion bombardment, annealing, and exposure to oxygen

Journal Article · Thu May 01 04:00:00 EDT 1986 · J. Vac. Sci. Technol., A; (United States)

DOI:https://doi.org/10.1116/1.573959· OSTI ID:5541275

Jorgensen, B; Morgen, P

The surface composition and structure of SiC (hexagonal crystallites) are studied under Ar-ion bombardment, high-temperature cycling and adsorption of oxygen. Such treatments are necessary for surface cleaning and they also simulate environments in potential applications of SiC elements. Oxygen adsorption on surfaces which result after various cycles of Ar-ion bombardment and heating, i.e., with varying surface compositions, is studied to reveal details of the initial steps of oxidation. The experimental techniques were AES, XPS, and BAES (bremsstrahlung-induced AES). Bombardment with 3-keV Ar ions results in a nearly stoichiometric (1:1) surface. The implanted Ar accumulates strongly in the subsurface region during annealing at 900/sup 0/C. Annealing at higher temperatures (1200/sup 0/C) releases the Ar but also leads to decomposition of the surface, with the loss of Si. Oxygen adsorbs on the surface, in a reaction which mainly involves silicon atoms, and with an oxygen coverage related to the initial silicon surface concentration. At room temperature, the adsorption reaction contains two stages as for oxygen on clean silicon surfaces.

• Research Organization: Fysisk Institut, Odense University, Campusvej 55, DK-5230 Odense M, Denmark
• OSTI ID: 5541275
• Journal Information: J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 4:3; ISSN JVTAD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206* -- Ceramics
Cermets
& Refractories-- Radiation Effects
ADSORPTION
ANNEALING
ARGON IONS
BEAMS
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
CLEANING
CRYSTAL STRUCTURE
DECOMPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTS
HEAT TREATMENTS
HEATING
ION BEAMS
IONIZING RADIATIONS
IONS
NONMETALS
OXIDATION
OXYGEN
PHOTOELECTRON SPECTROSCOPY
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SILICON CARBIDES
SILICON COMPOUNDS
SORPTION
SPECTROSCOPY
SURFACE CLEANING
SURFACE FINISHING
VERY HIGH TEMPERATURE
X RADIATION