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Atomic structure of Si-SiO/sub 2/ interfaces suggesting a ledge mechanism of silicon oxidation

Conference · · AIP Conf. Proc.; (United States)
OSTI ID:5540864
The atomic structure of Si-SiO/sub 2/ interfaces resulting from oxidation of singular )111) and vicinal (111)3/sup 0/(11)0) and (111)2/sup 0/(11)2) has been studied by high resolution electron microscopy. The transition from crystalline Si to amorphous SiO/sub 2/ was found to be very abrupt. The structure of the interface can be described by a terrace-ledge-kink-model. This structure is consistent with a ledge mechanism of silicon oxidation.
Research Organization:
Materials and Molecular Research Division Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
DOE Contract Number:
AC03-76SF00098
OSTI ID:
5540864
Report Number(s):
CONF-8408104-
Conference Information:
Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 122:1
Country of Publication:
United States
Language:
English