Atomic structure of Si-SiO/sub 2/ interfaces suggesting a ledge mechanism of silicon oxidation
Conference
·
· AIP Conf. Proc.; (United States)
OSTI ID:5540864
The atomic structure of Si-SiO/sub 2/ interfaces resulting from oxidation of singular )111) and vicinal (111)3/sup 0/(11)0) and (111)2/sup 0/(11)2) has been studied by high resolution electron microscopy. The transition from crystalline Si to amorphous SiO/sub 2/ was found to be very abrupt. The structure of the interface can be described by a terrace-ledge-kink-model. This structure is consistent with a ledge mechanism of silicon oxidation.
- Research Organization:
- Materials and Molecular Research Division Lawrence Berkeley Laboratory, University of California, Berkeley, CA 94720
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5540864
- Report Number(s):
- CONF-8408104-
- Conference Information:
- Journal Name: AIP Conf. Proc.; (United States) Journal Volume: 122:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360604 -- Materials-- Corrosion
Erosion
& Degradation
AMORPHOUS STATE
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
ELECTRON MICROSCOPY
ELEMENTS
INTERFACES
MICROSCOPY
MINERALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES
360602* -- Other Materials-- Structure & Phase Studies
360604 -- Materials-- Corrosion
Erosion
& Degradation
AMORPHOUS STATE
CHALCOGENIDES
CHEMICAL REACTIONS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
ELECTRON MICROSCOPY
ELEMENTS
INTERFACES
MICROSCOPY
MINERALS
OXIDATION
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
SEMIMETALS
SILICA
SILICON
SILICON COMPOUNDS
SILICON OXIDES