skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Local response of ITO/polysilicon solar cells

Thesis/Dissertation ·
OSTI ID:5538027

Scanning light spot (SLS) and electron beam induced current (EBIC) techniques have been used to study the local response of ITO/polysilicon solar cells. The SLS and EBIC techniques were applied to polycrystalline solar cells in conjunction with etch pit studies in order to determine the causes of the local variation in cell response. It was found that the minority carrier diffusion length does not significantly effect the response around dislocations and grain boundaries. ITO/polysilicon cell fabricated with cast and zone refined polysilicon substrates were investigated. It is shown that the two materials have significantly different properties. The most important difference is the density and electrical activity of the grain boundaries and dislocations. In contrast to the zone refined polysilicon in which most or all of the grain boundaries and dislocation are active recombination centers, the costpolysilicon has few active centers. It is concluded that the intragrain defects reduce the cell current response as well as grain boundaries and sometimes reduce the output more than grain boundaries.

OSTI ID:
5538027
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English