Local response of ITO/polysilicon solar cells
Scanning light spot (SLS) and electron beam induced current (EBIC) techniques have been used to study the local response of ITO/polysilicon solar cells. The SLS and EBIC techniques were applied to polycrystalline solar cells in conjunction with etch pit studies in order to determine the causes of the local variation in cell response. It was found that the minority carrier diffusion length does not significantly effect the response around dislocations and grain boundaries. ITO/polysilicon cell fabricated with cast and zone refined polysilicon substrates were investigated. It is shown that the two materials have significantly different properties. The most important difference is the density and electrical activity of the grain boundaries and dislocations. In contrast to the zone refined polysilicon in which most or all of the grain boundaries and dislocation are active recombination centers, the costpolysilicon has few active centers. It is concluded that the intragrain defects reduce the cell current response as well as grain boundaries and sometimes reduce the output more than grain boundaries.
- OSTI ID:
- 5538027
- Resource Relation:
- Other Information: Thesis (Ph. D.)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SILICON SOLAR CELLS
ELECTRICAL PROPERTIES
PHYSICAL PROPERTIES
CAST METHOD
COMPARATIVE EVALUATIONS
DIFFUSION LENGTH
ELECTRIC CURRENTS
ELECTRON BEAMS
GRAIN BOUNDARIES
INDIUM OXIDES
MEASURING METHODS
POLYCRYSTALS
TIN OXIDES
ZONE REFINING
BEAMS
CHALCOGENIDES
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTALS
CURRENTS
DIMENSIONS
DIRECT ENERGY CONVERTERS
EQUIPMENT
INDIUM COMPOUNDS
LENGTH
LEPTON BEAMS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PROCESSING
REFINING
SEPARATION PROCESSES
SOLAR CELLS
SOLAR EQUIPMENT
TIN COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion