Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Photoelectrochemical behavior of thin CdSe and coupled TiO[sub 2]/CdSe semiconductor films

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100143a041· OSTI ID:5536519
;  [1]
  1. Univ. of Notre Dame, IN (United States)
Photoelectrochemical effects at CdSe thin film electrodes (thickness 30-200 [angstrom]) have been investigated by monitoring open-circuit voltage and short-circuit current at varying film thicknesses and incident light intensities. Unlike the situation in conventional photoelectrochemical cells that employ single-crystal or polycrystalline semiconductors, the charge separation in thin CdSe films is not controlled by the space charge layer at the semiconductor-electrolyte interface, but it is controlled by the differing rates of electron and hole transfer into the solution. Quick decay of the photocurrent, even in the presence of a redox couple such as [Fe(CN)[sub 6]][sup 3[minus]/4[minus]], suggests high degree of charge recombination within the thin CdSe film. It is possible to improve the photocurrent stability of a thin CdSe film by coupling it with a TiO[sub 2] particulate film. The improved charge separation in the coupled semiconductor system has a beneficial effect in improving the photocurrent stability of thin semiconductor films. 22 refs., 8 figs., 1 tab.
OSTI ID:
5536519
Journal Information:
Journal of Physical Chemistry; (United States), Journal Name: Journal of Physical Chemistry; (United States) Vol. 97:41; ISSN JPCHAX; ISSN 0022-3654
Country of Publication:
United States
Language:
English