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Title: Amorphous semiconductor solar cell having a grained transparent electrode

Patent ·
OSTI ID:5533121

An amorphous semiconductor solar cell is disclosed which comprises a glass substrate and a transparent electrode coated on the substrate. The device also comprises an amorphous semiconductor layer on the transparent electrode, and a rear electrode on the amorphous layer, wherein the average grain diameter of the surface of the transparent electrode ranges from 0.1 ..mu..m to 2.5 ..mu..m.

Assignee:
Kogyo Gijutsuin (Japan); Taiyo Yuden Kabushiki Kaisha (Japan)
Patent Number(s):
US 4500743
OSTI ID:
5533121
Resource Relation:
Patent Priority Date: Priority date 30 Sep 1982, Japan; Other Information: PAT-APPL-428712
Country of Publication:
United States
Language:
English