SiGe Coherent Islanding and Stress Relaxation in the High Mobility Regime

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.79.3946· OSTI ID:553118

Floro, J A; Chason, E; Twesten, R D ^[1]; Hwang, R Q ^[2]; Freund, L B ^[3]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)
2. Sandia National Laboratories, Livermore, California 94551-0969 (United States)
3. Division of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

Real-time stress measurements during Si{sub 8 }Ge{sub 2}/Si(001) heteroepitaxy, combined with {ital ex situ} microscopy, are used to examine islanding dynamics under conditions of relatively low strain and high adatom mobility, where morphological evolution bypasses dislocation formation. We show that growth in this regime proceeds similarly to growth of Ge/Si(001) (i.e., at high strain, low temperature), but with the length scales expanded by the reduced strain. This greatly facilitates measurement of the coupled kinetics of morphological evolution and stress relaxation. {copyright} {ital 1997} {ital The American Physical Society}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 553118
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 20 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM SILICIDES
HETEROJUNCTIONS
MOBILITY
SILICON
STRESS RELAXATION
THICKNESS
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY