Direct calculation of Slater-Koster parameters: Fourfold-coordinated silicon/boron phases
- Lawrence Livermore National Laboratory, University of California, Livermore, California 94550 (United States)
The need for tight-binding total-energy representations of interatomic forces has renewed interest in Slater-Koster parametrization of electron band structure. For larger numbers of parameters, as in multicomponent systems, and to truly test issues of transferability, it is advantageous to have means of directly calculating these parameters. Here we derive analytic expressions for the two-center Slater-Koster hopping parameters, effective site energies, and effective crystal-field parameters in terms of the one-electron Hamiltonian {ital matrix} elements in any localized minimal basis, and analogous quantities for the overlap. We apply these expressions to the cubic diamond phases of Si and B, and the zinc-blende phase of SiB at three volumes each, using spd, nonorthogonal full potential linear muffin-tin orbital matrix elements calculated with a linked or contracted minimal basis. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 553089
- Journal Information:
- Physical Review, B: Condensed Matter, Vol. 56, Issue 19; Other Information: PBD: Nov 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Transferable nonorthogonal tight-binding parameters for silicon
Slater-Koster interpolation of energy bands of complex crystal structures: Tetragonal zirconia