The effect of surface processing conditions on the junction properties of CuIn{sub x}Ga{sub 1{minus}x}Se{sub 2} solar cells
- Department of Electrical Engineering, Center for Clean Energy and Vehicles, University of South Florida, Tampa, Florida 33620 (United States)
Using a manufacturing friendly process we have developed effective techniques for incorporating Ga in CIGS films. In one techniques we configure the Ga to form an effective BSF and to reduce point defects in the SC region while not increasing the band gap. This results in collection lengths of 2 {mu}m and J{sub {infinity}}{close_quote}s which are consistently in the 40mA/cm{sup 2} range. In a second technique we alloy Ga in the SC region and increase the band gap. This results in mild deterioration of both bulk and surface properties attributable to an unoptimized incorporation environment. The surface properties are shown to be dominated by recombination lifetime which varies systematically with the Se flux environment during surface formation. These insights are providing the foundation for ongoing advances in device performance and imply no fundamental limitations to performance for these processing techniques. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 552859
- Report Number(s):
- CONF-961178-; ISSN 0094-243X; TRN: 9722M0054
- Journal Information:
- AIP Conference Proceedings, Vol. 394, Issue 1; Conference: National Renewable Energy Laboratory (NREL)/Sandia National Laboratories (SNL) photovoltaics program review meeting, Lakewood, CO (United States), 18-22 Nov 1996; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
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