Why is CuInSe{sub 2} tolerant to defects and what is the origin of {open_quotes}Ordered Defect Structures{close_quotes}

Journal Article · Fri Jan 31 23:00:00 EST 1997 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.52886· OSTI ID:552820

Zunger, A; Zhang, S B; Wei, S ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

This paper explains both the (1) remarkable electronic passivity of CuInSe{sub 2} to its many structural defects, and (2) the occurance of previously noted but unexplained series of structures CuIn{sub 5}Se{sub 8}, CuIn{sub 3}Se{sub 5}, Cu{sub 2}In{sub 4}Se{sub 7}, etc. in terms of the unusual stability of the charge-compensated defect pair (2V{sub Cu}{sup {minus}}+In{sub Cu}{sup 2+}). {copyright} {ital 1997 American Institute of Physics.}

• Research Organization: National Renewable Energy Laboratory
• DOE Contract Number: AC36-83CH10093
• OSTI ID: 552820
• Report Number(s): CONF-961178--
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 394; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
66 PHYSICS
CHARGE EXCHANGE
CHARGE TRANSPORT
COPPER SELENIDES
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
INDIUM SELENIDES
POINT DEFECTS
VACANCIES