Photosensitivity and imaging characteristics of ion-implanted PLZT ceramics

Conference · Tue Jan 01 04:00:00 EST 1985

OSTI ID:5525911

Land, C E

We reported in previous papers that both the near-uv and the visible photosensitivities of ferroelectric-phase PLZT (lead lanthanum zirconate titanate) ceramics are increased by as much as four orders of magnitude by ion implantation or a combination of thermal diffusion of Al and ion implantation. New results are presented here on high-energy (1 MeV) implants of Al and Ni and coimplants of Al + Ne and Ni + Ne, and these results are compared with earlier 500 keV implants of Al and Cr and coimplants of Al + Ne and Cr + Ne as surface modification techniques for increasing the visible photosensitivity of PLZT. The important role of grain size in determining optimum contrast and resolution of stored optical information is described in terms of new experimental results.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5525911
• Report Number(s): SAND-85-0435C; CONF-850880-2; ON: DE85015489
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM IONS
CHARGED PARTICLES
CHROMIUM IONS
CRYSTAL STRUCTURE
ENERGY RANGE
GRAIN SIZE
ION IMPLANTATION
IONS
LANTHANUM COMPOUNDS
LEAD COMPOUNDS
MEV RANGE
MEV RANGE 01-10
MICROSTRUCTURE
NEON IONS
NICKEL IONS
OXYGEN COMPOUNDS
PHOTOSENSITIVITY
PHYSICAL RADIATION EFFECTS
PLZT
RADIATION EFFECTS
RARE EARTH COMPOUNDS
SENSITIVITY
SIZE
TITANATES
TITANIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
ZIRCONATES
ZIRCONIUM COMPOUNDS