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Title: Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI/sub 2/ chalcopyrite compounds

Patent ·
OSTI ID:5525583

Apparatus is disclosed for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI/sub 2/ chalcopyrite ternary materials which is vacuum deposited in a thin ''composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns (approx. = 2.5 ..mu..m to approx. = 5.0 ..mu..m) and wherein the lower region of the photovoltaic active material preferably comprises a low resisitivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

Assignee:
The Boeing Co.
Patent Number(s):
US 4392451
OSTI ID:
5525583
Resource Relation:
Patent File Date: Filed date 2 Jul 1981; Other Information: PAT-APPL-278343
Country of Publication:
United States
Language:
English