Spectral hole-burning and gain saturation in semiconductor lasers: Strong-signal theory

Journal Article · Mon Feb 15 00:00:00 EST 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339990· OSTI ID:5525560

Agrawal, G P

The nonlinear susceptibility of semiconductor gain media is obtained by including the effect of intraband carrier relaxation within the density-matrix formalism. The result is used to obtain the approximate analytic expressions showing how the optical gain and the refractive index change with an increase in the laser power. The index change is generally small but can be positive or negative depending on which side of the gain peak the lasing mode is located. By contrast, the gain is always reduced because of spectral hole-burning. The implications of gain saturation on the dynamic response of semiconductor lasers are discussed together with the possibility of experimental verification.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5525560
• Journal Information: J. Appl. Phys.; (United States), Vol. 63:4
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
GAIN
MATHEMATICAL MODELS
POWER
REFRACTIVITY
THEORETICAL DATA
AMPLIFICATION
DATA
INFORMATION
LASERS
NUMERICAL DATA
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)