Microstructural and dielectric susceptibility effects on predictions of dielectric properties

Conference · Mon Dec 01 04:00:00 EST 1997

OSTI ID:552290

Ferris, K F; Exarhos, G J ^[1]; Risser, S M ^[2]

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1. Pacific Northwest National Lab., Richland, WA (United States)
2. Texas A&M Univ., Commerce, TX (United States)

In modeling the dielectric properties of inhomogeneous materials, the treatment of the electric field interactions differentiate the usual modeling formalisms (such as the Maxwell-Garnett and Bruggeman effective medium methods) and their accuracy. In this paper, we show that the performance of effective medium methods is dependent upon a number of variables - defect concentration, alignment, and the dielectric constant of the material itself. Using our previously developed finite element model of an inhomogeneous dielectric, we have developed models for a number of dielectric films of varying dielectric constant and microstructures. Alignment of defects parallel to the applied field and the larger defect aspect ratios increase the overall dielectric constant. The extent of these effects is dependent on the dielectric constant of the bulk component.

• Research Organization: International Society for Optical Engineering, Washington, DC (United States)
• DOE Contract Number: AC06-76RL01830
• OSTI ID: 552290
• Report Number(s): CONF-961070--Vol.2966
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALIGNMENT
DEFECTS
DIELECTRIC MATERIALS
DIELECTRIC PROPERTIES
ELECTRIC FIELDS
MICROSTRUCTURE
POLYETHYLENES
ZIRCONIUM OXIDES