Biaxial stress effects on the TE/TM polarization switching of InGaAsP ridge-waveguide lasers

Journal Article · Sat Jul 01 00:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

DOI:https://doi.org/10.1109/68.36025· OSTI ID:5522716

Maciejko, R; Berger, J; Champagne, A ^[1]; Glinski, J ^[2]

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1. Ecole Polytechnique, Montreal, PQ (Canada)
2. Bell Northern Research Ltd., Ottawa, ON (Canada)

TE/TM polarization switching in ridge-waveguide InGaAsP lasers is analyzed with due consideration to biaxial stress effects on both the waveguiding and gain properties of the device. One establishes the conditions of switching for several models. In particular, the gain expression for uniaxial stress is extended to include biaxial stress, and the differences between the different models are presented.

• OSTI ID: 5522716
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:7; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
ELECTRONIC CIRCUITS
EMISSION
ENERGY-LEVEL TRANSITIONS
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASER MATERIALS
LASERS
MATERIALS
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STIMULATED EMISSION
STRESSES
SWITCHING CIRCUITS
WAVEGUIDES