Characterization of aluminum nitride thin films grown by plasma source molecular beam epitaxy
Conference
·
OSTI ID:552214
- Wayne State Univ., Detroit, MI (United States); and others
Aluminum nitride (AlN) thin films are grown by a newly developed plasma source molecular beam epitaxy (PSMBE) system. The films were grown on Al{sub 2}O{sub 3}(1{bar 1}02), Al{sub 2}O{sub 3}(0001), Si (111), and Si (100) substrates. Structural characterization of the films were performed by x-ray diffraction (XRD), atomic force microscopy (AFM), and high resolution electron microscopy (HREM). The XRD pattern indicates highly textured films. Cross-sectional HREM reveals epitaxy of AlN on most substrates. The Si(111) and A{sub 2}O{sub 3}(0001) plan is lattice matched to the c-plane growth of AlN and the Al{sub 2}O{sub 3} (1{bar 1}02) plane is lattice matched to the a-plane growth of AlN. The optical and thermal properties of these films are studied by ellipsometry and thermal wave analysis. The quality of the films is evidenced by the low optical absorption, bulk-like optical index, and bulk-like thermal conductivity.
- Research Organization:
- International Society for Optical Engineering, Washington, DC (United States)
- OSTI ID:
- 552214
- Report Number(s):
- CONF-9410155--Vol.2428
- Country of Publication:
- United States
- Language:
- English
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