Comprehensive characterization of micro arcing related particles
- Applied Materials, Inc., Santa Clara, CA (United States); and others
Particle identification to determine and eliminate root cause of contamination is a critical step in contamination/defect-free semiconductor manufacturing processes. Currently, a SEM equipped with EDX and a sophisticated navigation system is the most powerful tool in analyzing the chemical composition and morphology of individual sub micron particles on wafer surfaces to determine root cause (Integrated Particle Analysis System or PAS). Limitations of commercial instruments are low throughput and insufficient sensitivity and accuracy for compositional determination of sub 0.1 micron particles. This presentation overviews the types of navigational software enhancements that increase speed and accuracy, the importance of increased EDX sensitivity, and the use of AUGER, and Micro-Raman to assist in elucidating root cause of more complex sub micron particles. In one example Micro-Raman is used to differentiate Al{sub 2}O{sub 3} particles from anodized, oxidized aluminium or ceramic origins by identifying differences in trace impurities. Additionally an overview describing the use of a confocal laser microscope to rapidly identify differentiating characteristics of small and/or low profile defects collecting characteristic information is not possible by conventional analytical particle counting tools.
- Research Organization:
- International Society for Optical Engineering, Washington, DC (United States)
- OSTI ID:
- 552093
- Report Number(s):
- CONF-9510106--Vol.2714
- Country of Publication:
- United States
- Language:
- English
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