Level excitation cross sections of Si I fragments produced by 100 eV electron impact on SiH/sub 4/

Journal Article · Fri Jan 01 04:00:00 EST 1988 · J. Chem. Phys.; (United States)

OSTI ID:5512631

Sato, T; Kono, A; Goto, T

The fluorescence decay Si I atomic lines after electron impact excitation of SiH/sub 4/ molecular gas was observed, and the level excitation cross sections (LECS) of Si I fragments were determined by separating the contribution from cascade transitions to line emissions. Observed transitions were 4s /sup 1/P--3p/sup 2/ /sup 1/D, 4s /sup 3/P--3p/sup 2/ /sup 3/P, 3d /sup 1/P--3p/sup 2/ /sup 1/S, 3d /sup 1/D--3p/sup 2/ /sup 1/D, 3d /sup 1/F--3p/sup 2/ /sup 1/D, 3d /sup 3/P--3p/sup 2/ /sup 3/P, and 3p/sup 3/ /sup 3/D--3p/sup 2/ /sup 3/P, for which the LECSs of the upper levels were determined at 100 eV excitation energy. The contribution of the direct excitations to these line emissions were found to range from 37% to 80%. Analysis of the 4s /sup 1/P--3p/sup 2/ /sup 1/D decay curve also gave the LECSs of the cascading levels 4p /sup 1/P, 4p /sup 1/S, and 4p /sup 1/D. Also obtained were some radiative lifetimes not reported before.

• Research Organization: Department of Electronics, Faculty of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464, Japan
• OSTI ID: 5512631
• Journal Information: J. Chem. Phys.; (United States), Journal Name: J. Chem. Phys.; (United States) Vol. 88:1; ISSN JCPSA
• Country of Publication: United States
• Language: English

Related Subjects

640304* -- Atomic
Molecular & Chemical Physics-- Collision Phenomena
74 ATOMIC AND MOLECULAR PHYSICS
COLLISIONS
CROSS SECTIONS
DISSOCIATION
ELECTRON COLLISIONS
ELECTRON-MOLECULE COLLISIONS
EMISSION SPECTRA
ENERGY RANGE
ENERGY-LEVEL TRANSITIONS
EV RANGE
EV RANGE 10-100
EXCITATION
HYDRIDES
HYDROGEN COMPOUNDS
MOLECULE COLLISIONS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SILANES
SILICON COMPOUNDS
SPECTRA