Anisotropic Resistivities of Precisely Oxygen Controlled Single-Crystal Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}: Systematic Study on {open_quote}{open_quote}Spin Gap{close_quote}{close_quote} Effect
- NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi-Shi, Kanagawa 243-01 (Japan)
- Department of Applied Physics, Faculty of Science, Science University of Tokyo, 1-3 Kagurazaka, Shinjuku-ku, Tokyo 162 (Japan)
The in-plane resistivity {rho}{sub a}(T) and the out-of-plane resistivity {rho}{sub c}(T) have been systematically measured for Bi{sub 2}Sr {sub 2}CaCu{sub 2}O{sub 8+{delta}} single crystals with their oxygen contents precisely controlled. In the underdoped region, deviation from T -linear in-plane resistivity, which evidences the opening of the {open_quotes}spin gap,{close_quotes} is clearly observed, while the out-of-plane resistivity is well reproduced by the activation-type phenomenological formula {rho}{sub c}(T)=(a/T)exp ({Delta}/T)+c . In contrast to the YBa{sub 2}Cu {sub 3}O{sub 7{minus}{delta}} system, we find that the onset of the semiconducting {rho}{sub c}(T) does not coincide with the opening of the spin gap seen in the {rho}{sub a}(T) in this Bi{sub 2}Sr {sub 2}CaCu{sub 2}O{sub 8+{delta}} system. {copyright} {ital 1997} {ital The American Physical Society}
- OSTI ID:
- 550407
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 11 Vol. 79; ISSN 0031-9007; ISSN PRLTAO
- Country of Publication:
- United States
- Language:
- English
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