Picosecond photoresponse in /sup 3/He/sup +/ bombarded InP photoconductors

Journal Article · Sat Jan 14 23:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94711· OSTI ID:5500671

Downey, P M; Schwartz, B

/sup 3/He/sup +/ bombardment is shown to be an effective means of achieving free-carrier lifetimes as short as 1 ps in Fe-doped InP without compromising the dark resistance of the photoconductor. Autocorrelation measurements demonstrate that these bombarded photoconductors operate as sampling gates with 2-ps sampling apertures and millivolt sensitivity. They exhibit a 10--90% decay time of 30 ps when used as pulse generators; we attribute this behavior to imperfect contacts.

• Research Organization: Bell Telephone Laboratories, Holmdel, New Jersey 07733
• OSTI ID: 5500671
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:2; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

640301* -- Atomic
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71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CARRIER LIFETIME
CHARGED PARTICLES
COLLISIONS
CRYSTAL DOPING
DECAY
DOPED MATERIALS
ENERGY RANGE
EVEN-ODD NUCLEI
FUNCTIONS
HELIUM 3
HELIUM IONS
HELIUM ISOTOPES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
ION COLLISIONS
IONS
IRON IONS
ISOTOPES
KEV RANGE
KEV RANGE 100-1000
LIFETIME
LIGHT NUCLEI
MATERIALS
NUCLEI
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RESPONSE FUNCTIONS
SENSITIVITY
STABLE ISOTOPES